2SD2655 데이터시트 - Hitachi -> Renesas Electronics
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2SD2655
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Hitachi -> Renesas Electronics
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: IC = 1 A
• Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
• High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
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제조사
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ( Rev : 2011 )
Renesas Electronics
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ( Rev : 2005 )
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Wing Shing International Group
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