2SCR586JFRG 데이터시트 - Inchange Semiconductor
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2SCR586JFRG
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
• High DC Current Gain-
: hFE= 120-390@IC= 0.5A
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for use in general-purpose amplifier and switching
applications.
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