NPN Epitaxial Planar Silicon Transistor
FEATUREs
• Adoption of MBIT process
• Large current capacitance (IC=10A)
• Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.))
• High-speed switching (tf=25ns(typ.))
APPLICATIONs
• Relay drivers, lamp drivers, motor drivers