2SC3624A 데이터시트 - Renesas Electronics
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2SC3624A
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제조사
Renesas Electronics
FEATURES
● High DC Gurrent Gain : hFE = 1000 to 3200
● Low VCE(sat) : VCE(sat) = 0.07 V TYP.
● High VEBO : VEBO = 15 V (2SC3624A)
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제조사
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
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