2SC3419(1997) 데이터시트 - Toshiba
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Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
• Low Saturation Voltage
: VCE (sat) = 0.25 V (Typ.) (IC = 500 mA, IB = 50 mA)
• High Collector Power Dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SA1356
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