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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  NEC => Renesas Technology  >>> 2SC3357-T1 PDF

2SC3357-T1 데이터시트 - NEC => Renesas Technology

2SC3357 image

부품명
2SC3357-T1

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8 Pages

File Size
75.8 kB

제조사
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
  NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz
  NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, IC= 40 mA, f = 1.0 GHz
• Large PTin Small Package
  PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.


부품명
상세내역
PDF
제조사
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics

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