2SB885 데이터시트 - New Jersey Semiconductor
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2SB885
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New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
:hFE=1500(Min)@lc=-2.5A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ lc= -2.5A
• Complement to Type 2SD1195
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
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