2SB883 데이터시트 - New Jersey Semiconductor
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2SB883
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New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE = 2000(Min)@ lc=-7A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
:VCE(sal)=-1.5V(Max)@lc=-7A
• Complement to Type 2SD1193
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
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