PNP/NPN Epitaxial Planar Silicon Tranasistors
FEATUREs
• Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.5V(PNP), 0.4V(NPN) max.
• Wide ASO leading to high resistance to breakdown.
APPLICATIONs
• Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.