2SB705 데이터시트 - New Jersey Semiconductor
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2SB705
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -140V(Min)
• Complement to Type 2SD745
• High Power Dissipation
APPLICATIONS
• For audio frequency power amplifier applications
• Suitable for output stages of 60-120 watts audio amplifier
and voltage regulations.
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