2SB645 데이터시트 - New Jersey Semiconductor
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2SB645
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
• High Power Dissipation- : Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD665
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 200W high-fidelity audio frequency amplifier output stage.
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