2SB507 데이터시트 - New Jersey Semiconductor
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2SB507
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Low Collector-Emitter Saturation Voltage-
:VCE(sat)=-1.0V(Max)@lc=-2.0A
• Complement to Type 2SD313
APPLICATIONS
• Designed for the output stage of 15W to 25WAF power
amplifier.
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