DESCRIPTION
➤ 2SB183060MA  is  a schottky  barrier  diode  chips fabricated in silicon epitaxial planar technology;
➤ Due to special schottky barrier structure, the chips have  very  low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
➤ Low power losses, high efficiency;
➤ Guard ring construction for transient protection;
➤ High ESD capability;
➤ High surge capability;
➤ Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤ Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;