2SB1429 데이터시트 - New Jersey Semiconductor
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2SB1429
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New Jersey Semiconductor
DESCRIPTION
• High Current Capability
• High Power Dissipation
• Collector-Emitter Breakdown Voltage- : V(BR)CEo=-180V(Min)
• Complement to Type 2SD2155
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency amplifier output stage applications
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