2SB1344 데이터시트 - New Jersey Semiconductor
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2SB1344
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VGt= -3V, lc= -2A)
• Complement to Type 2SD2025
APPLICATIONS
• Designed for power amplifier applications.
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