Plastic-Encapsulated Transistors

FEATURES
   Power dissipation
        PD: 0.25   W (Tamb=25℃)
   Collector current
        ICM: -0.03   A
   Collector-base voltage
        V(BR)CBO: -210 V
   Operating and storage junction temperature range 
         TJ, Tstg: -55℃to +150℃