2SA743A 데이터시트 - New Jersey Semiconductor
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2SA743A
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New Jersey Semiconductor
DESCRIPTION
• Good Linearity of hFE
• High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V (Min)
• Complement to Type 2SC1212A
APPLICATIONS
• Designed for use in low frequency power amplifier
applications.
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