2SA1166 데이터시트 - New Jersey Semiconductor
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2SA1166
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage V(BR)CEO=-150V(Min)
• Good Linearity of hFE
• High Power Dissipation
APPLICATIONS
• Power amplifier applications
• Recommended for 100W high-fidelity audio frequency amplifier output stage
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