2N7002K 데이터시트 - HY ELECTRONIC CORP.
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2N7002K
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HY ELECTRONIC CORP.
RDS(ON), VGS @10V, IDS@ 500mA=2Ω
RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω
FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC
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제조사
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
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60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
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