General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
Very fast switching
Trench MOSFETtechnology
ESD protection up to 2 kV
Logic-level compatible
Ultra thin package profile with 0.37 mm height

APPLICATIONs
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits