DESCRIPTION
The 2N6898 is a P-channel enchancement-mode silicon-gate power MOS field-effect transisotr designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-driver power. This device can be operated directly from an integrated circuit.

FEATUREs
• -25A, -100V
• rDS(on) = 0.20Ω
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device