2N6436 데이터시트 - New Jersey Semiconductor
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2N6436
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New Jersey Semiconductor
HIGH-POWER PNP SILICON TRANSISTORS
... designed for use in industrial power amplifiers and switching circuit applications.
FEATURES:
* High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A
* Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A
* Complementto2N6338 thru 2N6340
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