2N6387 데이터시트 - ON Semiconductor
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2N6387
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ON Semiconductor
Plastic Medium-Power Silicon Transistors
These devices are designed for general-purpose amplifier and low-speed switching applications.
FEATUREs
• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc - 2N6387, 2N6388
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available*
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제조사
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