2N4912 데이터시트 - NTE Electronics
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2N4912
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NTE Electronics
Description:
The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
FEATUREs:
● Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A
● Excellent safe Operating Area
● Gain Specified to IC = 1A
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