2N3772(2019) 데이터시트 - ON Semiconductor
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2N3772
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ON Semiconductor
High Power NPN Silicon Power Transistors
These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
FEATUREs
• Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
= 2.5 Adc @ VCE = 60 Vdc − 2N3772
• These Devices are Pb−Free and are RoHS Compliant
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