260N4F7 데이터시트 - STMicroelectronics
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260N4F7
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STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
◾ Among the lowest RDS(on) on the market
◾ Excellent figure of merit (FoM)
◾ Low Crss/Ciss ratio for EMI immunity
◾ High avalanche ruggedness
APPLICATIONs
◾ Switching applications
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제조사
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N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package
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N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7 Power MOSFET in a TO-220FP package
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N-channel 60 V, 4.6 mΩ typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package
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N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H2PAK-2 package
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N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package
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