제조사
![UTC](/logo/UTC.png)
Unisonic Technologies
![UTC](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =11Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
0.5 Amps, 600 Volts N-CHANNEL MOSFET
Unisonic Technologies
0.5 Amps, 600/650 Volts N-CHANNEL MOSFET
Unisonic Technologies
2 Amps, 600 Volts N-CHANNEL MOSFET
Unspecified
2 Amps, 600 Volts N-CHANNEL MOSFET
Unisonic Technologies
7.4 Amps, 600 Volts N-CHANNEL MOSFET
Unisonic Technologies
4.5 Amps, 600 Volts N-CHANNEL MOSFET
Unisonic Technologies
2 Amps, 600 Volts N-CHANNEL MOSFET ( Rev : 2005 )
Unisonic Technologies
2 Amps, 600 Volts N-CHANNEL MOSFET
ARTSCHIP ELECTRONICS CO.,LMITED.
1.2 Amps, 600 Volts N-CHANNEL MOSFET
Unisonic Technologies
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET ( Rev : 2010 )
Unisonic Technologies