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1214-300M 데이터시트 - Microsemi Corporation

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1214-300M

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Microsemi
Microsemi Corporation Microsemi

GENERAL DESCRIPTION
The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and NiCr emitter ballasting to provide high reliability and supreme ruggedness.

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제조사
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
Advanced Power Technology
300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Microsemi Corporation
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
Advanced Power Technology
300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz
GHz Technology
100 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz
GHz Technology
500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz
Unspecified
500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz
GHz Technology
1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz
Microsemi Corporation
1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz ( Rev : V2 )
Microsemi Corporation
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
HVVi Semiconductors, Inc.

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