11N60C3(2005) 데이터시트 - Infineon Technologies
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11N60C3
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Infineon Technologies
Cool MOS™ Power Transistor
FEATURE
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC0) for target applications
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