제조사
Intersil
These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to
source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
FEATUREs
• 0.30A, 60V
•rDS(ON)= 6.0Ω
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
Harris Semiconductor
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
Fairchild Semiconductor
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
Intersil
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
Intersil
Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Motorola => Freescale
SMARTDISCRETES Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Motorola => Freescale
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
Intersil
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Harris Semiconductor
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
Intersil
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
