P/N + 설명 + 콘텐츠 검색
부품명(s) : MRF6V10010NR4
Freescale Semiconductor
상세내역 : RF Power Field Effect Transistor
부품명(s) : MRF6V10010NR4
NXP Semiconductors.
상세내역 : RF Power Field Effect Transistor
부품명(s) : 1214-300M
Advanced Power Technology
상세내역 : 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
부품명(s) : 1214-300M
Microsemi Corporation
상세내역 : 300 Watts - 40 Volts, 150µs, 10% Radar 1200 - 1400 MHz
부품명(s) : 1214-300V
Microsemi Corporation
상세내역 : 300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
부품명(s) : 1214-300
Advanced Power Technology
상세내역 : 300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
부품명(s) : HVV1214-025
Advanced Semiconductor
상세내역 : 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty
부품명(s) : MRF6V10250HSR3
Freescale Semiconductor
상세내역 : RF Power Field Effect Transistor
부품명(s) : JTDA50-2 JTDA50
Unspecified
상세내역 : 50 Watts, 36 Volts, 960 - 1215 MHz
부품명(s) : MRF7S35015HSR3
Freescale Semiconductor
상세내역 : RF Power Field Effect Transistor
부품명(s) : MRF7S35015HSR3
Freescale Semiconductor
상세내역 : RF Power Field Effect Transistor (Rev - 2008)
부품명(s) : JTDA50 JTDA50-2
Unspecified
상세내역 : 50 Watts, 36 Volts, 960 - 1215 MHz
DAICO Industries
상세내역 : Medium Power PIN Diode SP2T
부품명(s) : GI1-1200 GI1-1400 GI1-1600
General Semiconductor
상세내역 : MINIATURE HIGH VOLTAGE GLASS PASSIVATED RECTIFIER