STB80NF75L 데이터 시트보기 (PDF) - STMicroelectronics
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STB80NF75L
STMicroelectronics
STB80NF75L Datasheet PDF : 11 Pages
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STB80NF75L/-1/ STP80NF75L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
Typ
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
75
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
°C/W
°C/W
°C
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 5 V
VGS = 10 V
ID = 40 A
ID = 40 A
Min.
1
Typ.
1.6
0.01
0.008
Max.
2.5
0.013
0.010
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID = 40 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
50
5000
835
360
Max.
Unit
S
pF
pF
pF
2/11
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