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STB80NF75L

N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STP80NF75L

STB80NF75L STB80NF75L-1

N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

STP80NF75L

STB80NF75L

STB80NF75L-1

75 V

75 V

75 V

<0.01 Ω

<0.01 Ω

<0.01 Ω

s TYPICAL RDS(on) = 0.008 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s LOW THRESHOLD DRIVE

ID

80 A

80 A

80 A

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s SOLENOID AND RELAY DRIVERS

3

1

D2PAK

TO-263

123

I2PAK

TO-262

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(•)

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM(••) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Current Limited by Package

(••) Pulse width limited by safe operating area.

November 2001

.

Value

75

75

± 16

80

80

320

300

2

12

930

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

(1) ISD ≤80A, di/dt ≤960A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V

1/11

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