STW10NC70Z 데이터 시트보기 (PDF) - STMicroelectronics
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STW10NC70Z
STMicroelectronics
STW10NC70Z Datasheet PDF : 8 Pages
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STW10NC70Z
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
0.66
Rthj-amb Thermal Resistance Junction-ambient Max
30
Rthc-sink Thermal Resistance Case-sink Typ
0.1
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
10.6
380
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
700
∆BVDSS/∆TJ
Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.8
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.3 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.58
Max.
5
0.75
Unit
V
Ω
10.6
A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =5.3A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
13
3550
250
30
Max.
Unit
S
pF
pF
pF
2/8
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