STB80NF55-06T4 데이터 시트보기 (PDF) - STMicroelectronics
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STB80NF55-06T4
STMicroelectronics
STB80NF55-06T4 Datasheet PDF : 11 Pages
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STB80NF55-06 STP80NF55-06 STP80NF55-06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 27 V
ID = 40 A
27
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
155
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 44 V ID= 80 A VGS= 10V
142
193
nC
29
nC
60.5
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 27 V
ID = 40 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
125
65
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A
di/dt = 100A/µs
VDD = 35 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
0.32
6.5
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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