STB80NF55-06T4 데이터 시트보기 (PDF) - STMicroelectronics
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STB80NF55-06T4
STMicroelectronics
STB80NF55-06T4 Datasheet PDF : 11 Pages
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STB80NF55-06
STP80NF55-06 STP80NF55-06FP
N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB80NF55-06
STP80NF55-06
STP80NF55-06FP
55 V
55 V
55 V
<0.0065 Ω
<0.0065 Ω
<0.0065 Ω
80 A
80 A
60 A
s TYPICAL RDS(on) = 0.005 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
2
1
TO-220FP
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
STB80NF55-06
STP80NF55-06
STP80NF55-06FP
55
55
± 20
80
60
80
42
320
240
300
45
2
0.30
7
1.3
------
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
V
-55 to 175
°C
(1) ISD ≤80A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 35V
September 2002
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55-06 @ B80NF55-06 @ P80NF55-06 @
1/11
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