W14NM50 데이터 시트보기 (PDF) - STMicroelectronics
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W14NM50 Datasheet PDF : 9 Pages
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STW14NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 6A
5.2
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
1000
pF
180
pF
25
pF
COSS eq (3). Equivalent Output
VGS = 0 V, VDS = 0 to 400 V
90
pF
Capacitance
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
1.6
Ω
Test Signal Level = 20mV
Open Drain
td(on)
Turn-on Delay Time
VDD = 250 V, ID = 6 A,
20
ns
tr
Rise Time
RG = 4.7 Ω, VGS = 10 V
10
ns
td(off)
tf
t(s) Qg
Qgs
c Qgd
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(see Figure 15)
VDD = 400 V, ID = 12 A,
VGS = 10 V
(see Figure 18)
19
ns
8
ns
28
38
nC
8
nC
15
nC
rodu Table 8: Source Drain Diode
P Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
te ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
14
A
56
A
le VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
1.5
V
so trr
Reverse Recovery Time
ISD = 12 A, di/dt = 100 A/µs
270
ns
b Qrr
Reverse Recovery Charge VDD = 100V
2.23
µC
O IRRM
Reverse Recovery Current (see Figure 16)
16.5
A
- trr
Reverse Recovery Time
ISD = 12 A, di/dt = 100 A/µs
340
ns
t(s) Qrr
Reverse Recovery Charge VDD = 100V, Tj = 150°C
3
µC
IRRM
Reverse Recovery Current (see Figure 16)
18
A
c (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
u (2) Pulse width limited by safe operating area.
Obsolete Prod (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/9
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