W14NM50 데이터 시트보기 (PDF) - STMicroelectronics
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W14NM50 Datasheet PDF : 9 Pages
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STW14NM50
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
14
A
ID
Drain Current (continuous) at TC = 100°C
8.8
A
IDM (1)
Drain Current (pulsed)
56
A
PTOT
Total Dissipation at TC = 25°C
175
W
Derating Factor
1.28
W/°C
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(*)Limited only by maximum temperature allowed
(1)ISD ≤14A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
) Table 4: Thermal Data
t(s Rthj-case Thermal Resistance Junction-case Max
c Rthj-amb Thermal Resistance Junction-ambient Max
u Tl
Maximum Lead Temperature For Soldering Purpose
0.715
30
300
°C/W
°C/W
°C
rod Table 5: Avalanche Characteristics
P Symbol
Parameter
lete IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
bso EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
400
- O ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
) Table 6: On /Off
t(s Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
c V(BR)DSS Drain-source Breakdown ID = 250 µA, VGS = 0
500
u Voltage
rod IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0) VDS = Max Rating, TC = 125°C
10
te P IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
le VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
3
4
5
Obso RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 6 A
0.32
0.35
Unit
A
mJ
Unit
V
µA
µA
nA
V
Ω
2/9
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