STB100NF04-1 데이터 시트보기 (PDF) - STMicroelectronics

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STB100NF04-1

N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

Allowable Iav vs. Time in Avalanche

STP100NF04, STB100NF04, STB100NF04-1

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,

under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the Allowable Current in Avalanche

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)

tAV is the Time in Avalanche

To derate above 25 °C, at fixed IAV, the following equation must be applied:

IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth)

Where:

Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.

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