STB100NF04-1 데이터 시트보기 (PDF) - STMicroelectronics

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STB100NF04-1

N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STP100NF04, STB100NF04, STB100NF04-1

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID (#)

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (l) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tj

Operating Junction Temperature

Tstg

Storage Temperature

(l) Pulse width limited by safe operating area

(1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V

(#) Current Limited by Package

THERMAL DATA

Rthj-case

Rthj-pcb

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-pcb Max

Thermal Resistance Junction-ambient (Free air) Max

Maximum Lead Temperature For Soldering Purpose

Value

40

40

± 20

120

120

480

300

2

6

1.2

-55 to 175

TO-220 / I2PAK / D2PAK

0.5

See Curve on page 6

62.5

300

Unit

V

V

V

A

A

A

W

W/°C

V/ns

J

°C

°C/W

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

40

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

nA

VGS(th) Gate Threshold Voltage

VDS = VGS, ID = 250µA

2

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 50 A

0.0043 0.0046 Ω

2/15

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