R6011KND3 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6011KND3

Nch 600V 11A Power MOSFET

ROHM Semiconductor 

R6011KND3

　　　　　　

　 　 　 　 　 　 　 　 Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Source current

Pulsed source current

IS*1

TC = 25℃

ISP*2

-

-

11

A

-

-

33

A

Source-Drain voltage

VSD*6 VGS = 0V, IS = 11A

-

- 1.5 V

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

trr*6

Qrr*6

IS = 11A

di/dt = 100A/μs

Irr*6

- 355 -

ns

- 3.8 - μC

-

22

-

A

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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