BYG10D 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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BYG10D Datasheet PDF : 4 Pages
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BYG10D thru BYG10Y
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
1.6
1.4
VR = VRRM
Half Sine-Wave
1.2
RθJA ≤ 25 K/W
1.0
0.8
0.6
0.4
0.2
0
0
RθJA ≤ 125 K/W
RθJA ≤ 150 K/W
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 2. Max. Average Forward Current vs. Ambient Temperature
1000
VR = VRRM
100
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
400
350
VR = VRRM
300
PR - Limit at 100 % VR
250
200
150
100
PR - Limit at 80 % VR
50
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
5000
4000
TA = 100 °C
TA = 125 °C
3000
2000
TA = 75 °C
TA = 50 °C
TA = 25 °C
1000
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 6. Reverse Recovery Time vs. Forward Current
Revision:20170701-P1
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mail:lge@lgesemi.com
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