BYG10D 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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BYG10D

Low profile package

Shenzhen Luguang Electronic Technology Co., Ltd 

BYG10D thru BYG10Y

FEATURES

Low profile package

Ideal for automated placement

Controlled avalanche characteristics

Glass passivated junction

Low reverse current

High surge current capability

Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

Solder dip 260 °C, 40 s

Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-214AC (SMA)

Epoxy meets UL 94 V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC-Q101 qualified), meets JESD 201 class 2

whisker test

SMA/DO-214AC

0.063(1.60)

0.051(1.30)

0.096(2.45)

0.078(2.00)

0.059(1.50)

0.035(0.90)

0.181(4.60)

0.161(4.10)

0.108(2.75)

0.096(2.45)

0.209(5.30)

0.193(4.90)

0.012(0.30)

0.006(0.15)

0.008(0.20)

0.002(0.05)

Dimensions in inches and(millimeters)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL BYG10D BYG10G

Device marking code

BYG10D BYG10G

Maximum repetitive peak reverse voltage

Average forward current

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

VRRM

200

400

IF(AV)

IFSM

BYG10J BYG10K

BYG10J BYG10K

600

800

1.5

30

BYG10M

BYG10M

1000

BYG10Y

BYG10Y

1600

UNIT

V

A

A

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

ER

I(BR)R = 1 A, TJ = 25 °C (for BYG10D-BYG10M)

20

mJ

Operating junction and storage temperature range TJ, TSTG

- 55 to + 150

°C

Revision:20170701-P1

http://www.lgesemi.com

mail:lge@lgesemi.com

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