MMG3003NT1 데이터 시트보기 (PDF) - NXP Semiconductors.
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MMG3003NT1 Datasheet PDF : 17 Pages
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50 OHM TYPICAL CHARACTERISTICS
45
42
42
39
41
36
33
f = 900 MHz
100 kHz Tone Spacing
30
5.8
6
6.2
6.4
6.6
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
40
39
--40 --20
VCC = 6.2 Vdc
f = 900 MHz
100 kHz Tone Spacing
8 Vdc Supply with 10 Ω Dropping Resistor
0
20
40
60
80
100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
--30
--40
--50
--60
--70
VCC = 6.2 Vdc
f = 900 MHz
100 kHz Tone Spacing
--80
9
12
15
18
21
24
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation Distortion
versus Output Power
8
6
4
2
VCC = 6.2 Vdc
0
0 0.5 1 1.5 2 2.5 3 3.5 4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
MMG3003NT1
4
105
104
103
120
125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with VCC = 6.2 Vdc, ICC = 180 mA
Figure 11. MTTF versus Junction Temperature
--20
VCC = 6.2 Vdc, f = 2140 MHz, C5 = 1.3 pF
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--30 Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--40
--50
--60
--70
9
11
13
15
17
19
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
RF Device Data
Freescale Semiconductor, Inc.
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