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MMG3003NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

Table 4. Electrical Characteristics (VCC = 6.2 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

19.3

20

—

IRL

—

--15

—

Output Return Loss (S22)

ORL

—

--9.3

—

Power Output @ 1dB Compression

P1dB

—

24

—

Third Order Output Intercept Point

OIP3

—

40.5

—

Noise Figure

NF

—

4

—

Supply Current

Supply Voltage

ICC

160

180

205

VCC

—

6.2

—

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

Table 5. Functional Pin Description

Pin

Number

Pin Function

1

RFin

2

Ground

3

RFout/DC Supply

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Human Body Model (per JESD 22--A114)

Machine Model (per EIA/JESD 22--A115)

Charge Device Model (per JESD 22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD 22--A113, IPC/JEDEC J--STD--020

2

123

Figure 1. Functional Diagram

Class

1B

A

IV

Rating

Package Peak Temperature

Unit

1

260

C

MMG3003NT1

2

RF Device Data

Freescale Semiconductor, Inc.

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