IGC06R60DE 데이터 시트보기 (PDF) - Infineon Technologies
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IGC06R60DE Datasheet PDF : 6 Pages
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IGC06R60DE
TRENCHSTOPTM RC-Series for hard switching applications
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, Tvj =25 C
DC collector current, limited by Tvj max
VCE
IC
600
V
1)
A
Pulsed collector current, tp limited by Tvj max
Ic,puls
24
A
Gate emitter voltage
VGE
20
V
Junction temperature range
Operating junction temperature
Short circuit data 2 )3) VGE = 15V, VCC = 400V, Tvj = 150°C
Tvj,max
Tvj,op,max
tSC
-40 ...+175
°C
-40 ...+175
C
5
µs
Safe operating area IGBT 2 )3)
I C , m a x = 16A, V C E , m a x = 600V, Tvj,op Tvj,op,max
Safe operating area Diode 2 )
I F , m a x = 16A, V R , m a x = 600V,
P m a x =6.6 kW , Tvj,op Tvj,op,max
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
3 ) allowed number of short circuits: <1000; time between short circuits: >1s
Static Characteristics (tested on wafer), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Diode Forward Voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V(BR)CES VGE=0V , IC= 0.2 mA 600
VCEsat
VF
VGE=15V, IC=8A
VGE=0V, IF=8A
1.65 2.1
V
1.7 2.1
VGE(th)
IC=0.15mA , VGE=VCE 4.3
5
5.7
ICES
VCE=600V , VGE=0V
40 µA
IGES
VCE=0V , VGE=20V
100 nA
rG
none
Dynamic Characteristics (not subject to production test - verified by design / characterization), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
VCE=25V,
VGE=0V,
f=1MHz
775
46
pF
23
Edited by INFINEON Technologies, IFAG IMM PSD D, L7388B, Edition 1.1, 31.05.2013
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