IGC06R60DE 데이터 시트보기 (PDF) - Infineon Technologies

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IGC06R60DE

TRENCHSTOP™ RC-Series for hard switching applications

Infineon Technologies 

IGC06R60DE

TRENCHSTOPTM RC-Series for hard switching applications

IGBT chip with monolithically integrated diode in packages offering space saving advantage

Features:

TRENCHSTOPTM Reverse Conducting (RC) technology for

600V applications offering:

• Optimised VCEsat and VF for low conduction losses

• Smooth switching performance leading to low EMI levels

• Very tight parameter distribution

• Operating range of 1 to 20kHz

• Maximum junction temperature 175°C

• Short circuit capability of 5μs

• Best in class current versus package size performance

• Qualified according to JEDEC for target applications

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

Applications:

Motor drives

Used for:

Discrete components and molded modules

Chip Type

IGC06R60DE

VCE

ICn

600V 8A

Die Size

2.44 x 2.47 mm2

Package

sawn on foil

Mechanical Parameters

Raster size

Emitter pad size

Gate pad size

Area: total / active IGBT / active Diode

Thickness

Wafer size

Max.possible chips per wafer

Passivation frontside

Pad metal

Backside metal

Die bond

Wire bond

Reject ink dot size

for original and

sealed MBB bags

Storage environment

for open MBB bags

2.44 x 2.47

see chip drawing

see chip drawing

mm2

6.026 / 3.718 / 0.702

70

µm

200

mm

4631

Photoimide

3200 nm AlSiCu

Ni Ag –system

Electrically conductive epoxy glue and soft solder

(temperature budget: 290°C for 1min. or 260°C for 1.5min.)

Al, <350µm

 0.65mm ; max 1.2mm

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

Edited by INFINEON Technologies, IFAG IMM PSD D, L7388B, Edition 1.1, 31.05.2013

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