STE38NB50 데이터 시트보기 (PDF) - New Jersey Semiconductor
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STE38NB50 Datasheet PDF : 4 Pages
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STE38NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ, Max. Unit
td(on)
tr
Turn-on Time
Rise Time
VDo = 250V
ID=19 A
RG = 4,7Q
VGs = 10V
(see test circuit, figure 3)
46
64
ns
32
45
ns
Qa Total Gate Charge
VDD = 400 V ID = 38 A VGS = 1 0 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
159 223 nC
35
nC
67
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time VDD = 400 V
ID = 38 A
Fall Time
RG = 4. 7 si
VGS = 10 V
Cross-over Time
(see test circuit, figure 5)
56
78
ns
53
74
ns
120 168 ns
SOURCE DRAIN DIODE
Symbol
ISD
!SDM(»)
VSD (*)
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 38 A VGS = 0
|SD = 38 A
di/dt = 100 A/us
VDD = 100V
Tj = 150°C
(see test circuit, figure 5)
(») Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min. Typ. Max. Unit
38
A
152
A
1.6
V
950
ns
12
uC
25
A
Safe Operating Area
Thermal Impedance
1C-4
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