STE38NB50 데이터 시트보기 (PDF) - New Jersey Semiconductor
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STE38NB50 Datasheet PDF : 4 Pages
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STE38NB50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.31
°C/W
Rthj-amb Thermal Resistance Junction-ambient
Max
30
°C/W
Rthc-sink Thermal Resistance Case-sink
Typ
0.1
°C/W
Ti Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD= 50 V)
Max Value
Unit
38
A
1200
mJ
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
V(BR)DSS Drain-source
ID = 250 uA VGS = 0
500
Breakdown Voltage
loss Zero Gate Voltage
VDS = Max Rating
Drain Current (Vos = 0) VDS = Max Rating
TC=125°C
less Gate-body Leakage
Current (VDs = 0)
VGS = ± 30 V
Typ. Max. Unit
V
10
^A
100 RA
± 100 nA
ON(*)
Symbol
VoS(th)
RDS(on)
lD(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID= 250 uA
Static Drain-source On VGS = 10V ID=19 A
Resistance
On State Drain Current VDS > ID(OFI) X RDS(on)max
VGS = 10V
Min. Typ. Max. Unit
3
4
5
V
0.11 0.13 n
38
A
DYNAMIC
Symbol
9fs (*)
Ciss
Coss
Crss
Parameter
Forward
Transcend uctance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS •* lD(on) X RDS(on)max ID = 19 A
Min.
18
Typ.
20
Max.
Unit
S
VDS = 25 V f = 1 MHz VGs = 0
7000 9100 PF
950 1235 PF
80
104
PF
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