MC74VHC1G125DFT2 데이터 시트보기 (PDF) - ON Semiconductor
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MC74VHC1G125DFT2 Datasheet PDF : 6 Pages
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MC74VHC1G125
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
VIL Maximum Low−Level
Input Voltage
VOH Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL Maximum Low−Level
Output Voltage
VIN = VIH or VIL
IOZ Maximum 3−State
Leakage Current
IIN
Maximum Input
Leakage Current
ICC Maximum Quiescent
Supply Current
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = VIH or VIL
VOUT = VCC or GND
VIN = 5.5 V or GND
VIN = VCC or GND
VCC
TA = 25°C
TA ≤ 85°C −55 ≤ TA ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
2.0
0.0 0.1
0.1
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
5.5
±0.2
$2.5
$2.5 mA
5
0 to
±0.1
±1.0
$1.0 mA
5.5
5.5
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Maximum Propagation
Delay, Input A to Y
(Figures 3 and 4)
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.5
4.5 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZH
Maximum Output
Enable Time,
Input OE to Y
(Figures 4 and 5)
VCC = 3.3 ± 0.3 V
RL = 1000 W
VCC = 5.0 ± 0.5 V
RL = 1000 W
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.1
4.5 7.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
Maximum Output
Disable Time,
Input OE to Y
(Figures 4 and 5)
VCC = 3.3 ± 0.3 V
RL 1000 W
VCC = 5.0 ± 0.5 V
RL = 1000 W
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Capacitance
4.0 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ COUT Maximum 3−State Output
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Capacitance (Output in
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ High Impedance State)
TA ≤ 85°C −55 ≤ TA ≤ 125°C
Min Max Min
Max Unit
9.5
12.0 ns
13.0
16.0
6.5
8.5
8.5
10.5
9.5
11.5 ns
13.0
15.0
6.0
8.5
8.0
10.5
11.5
14.5 ns
15.0
18.0
8.0
10.0
10.0
12.0
10
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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